March 2014
Intermediate to advanced
624 pages
26h 33m
English
Consider a forward-biased ideal (abrupt junction, no recombination or generation in the depletion region) long p-n junction diode under forward bias. On the following graph, sketch and label the total current Itotal , the total electron current In,total , and the total hole current Ip,total as a function of position throughout the entire device. The value of each has been given at the n-side edge of the depletion region for reference. (Hint: The excess carrier concentrations are essentially pinned to zero at the contacts.)
Consider (1) a long p-n junction diode with the ohmic ...