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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

6.5 The Mos Field-Effect Transistor

The MOS transistor is also called a surface field-effect transistor, since it depends on control of current through a thin channel at the surface of the semiconductor (Fig. 6–10). When an inversion region is formed under the gate, current can flow from drain to source (for an n-channel device). In this section we analyze the conductance of this channel and find the ID – VD characteristics as a function of gate voltage VG. As in the JFET case, we will find these characteristics below saturation and then assume ID remains essentially constant above saturation.

6.5.1 Output Characteristics

The applied gate voltage VG is accounted for by Eq. (6–​28) plus the voltage required to achieve flat band:

VG=VFBQsCi
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Publisher Resources

ISBN: 9780137577866