Skip to Main Content
Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

6.3 The Metal–​Semiconductor Fet

The depletion of the channel discussed above for a JFET can be accomplished by the use of a reverse-biased Schottky barrier instead of a p-n junction. The resulting device is called a MESFET, indicating that a metal–​semiconductor junction is used. This device is useful in high-speed digital or microwave circuits, where the simplicity of Schottky barriers allows fabrication to close geometrical tolerances. There are particular speed advantages for MESFET devices in III–​V compounds such as GaAs or InP, which have higher mobilities and carrier drift velocities than Si.

6.3.1 The GaAs MESFET

Figure 6–7 shows schematically a simple MESFET in GaAs. The substrate is undoped or doped with chromium, which has an energy ...

Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Electronic Devices and Integrated Circuits

Electronic Devices and Integrated Circuits

Rekha Singh, B. P. Singh
Digital Electronics

Digital Electronics

Betty Lincoln

Publisher Resources

ISBN: 9780137577866