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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

Problems

  1. 7.1 Given the data of Prob. 5.2 , plot the doping profiles Na(x) and Nd(x) for the following double-diffused transistor: The starting wafer is n-type Si with Nd = 1016 cm−3; Ns = 5 × 1013 cm−2 boron atoms are deposited on the surface, and these atoms are diffused into the wafer at 1100°C for 1 hr (D = 3 × 10−13cm2/s for B in Si at 1100°C); then the wafer is placed in a phosphorus diffusion furnace at 1000°C for 15 min (D = 3 × 10−14 cm2/s for P in Si at 1000°C). During the emitter diffusion, the surface concentration is held constant at 5 × 1020 cm−3. You may assume that the base doping profile does not change appreciably during the emitter diffusion, which takes place at a lower temperature and for a shorter time. Find the width ...

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Publisher Resources

ISBN: 9780137577866