March 2014
Intermediate to advanced
624 pages
26h 33m
English
| a | Chapter 1: unit cell dimension (Å); Chapter 6: metallurgical channel half-width for an FET (cm) |
| a, b, c | basis vectors |
| A | area (cm2) |
| ℬ | magnetic flux density (Wb/cm2) |
| B | base transport factor for a BJT |
| B, E, C | base, emitter, collector of a BJT |
| c | speed of light (cm/s) |
| C | capacitance/area in MOS (F/cm2) |
| Ci, Cd, Cit | insulator, depletion, interface-state MOS capacitance/area ... |