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Solid State Electronic Devices, 7th Edition
book

Solid State Electronic Devices, 7th Edition

by Ben Streetman, Sanjay Banerjee
March 2014
Intermediate to advanced content levelIntermediate to advanced
624 pages
26h 33m
English
Pearson
Content preview from Solid State Electronic Devices, 7th Edition

10.2 The Impatt Diode

In this section, we describe a type of microwave negative-conductance device that operates by a combination of carrier injection and transit-time effects. Diodes with simple p-n junction structure, or with variations on that structure, are biased to achieve tunneling or avalanche breakdown, with an a-c voltage superimposed on the d-c bias. The carriers generated by the injection process are swept through a drift region to the terminals of the device. We shall see that the a-c component of the resulting current can be approximately 180° out of phase with the applied voltage under proper conditions of bias and device configuration, giving rise to negative conductance and oscillation in a resonant circuit. Transit-time devices ...

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Publisher Resources

ISBN: 9780137577866