Wide Bandgap Semiconductors for Power Electronics

1Dislocation Formation During Physical Vapor Transport Growth of 4H‐SiC Crystals

Noboru Ohtani

Kwansei Gakuin University, School of Engineering, 2‐1 Gakuen, Sanda, Hyogo, 669‐1337, Japan

1.1 Introduction

Silicon carbide (SiC) is the leading candidate among wide‐bandgap semiconductor materials for next‐generation power semiconductor devices. Over recent decades, the quality of SiC single crystals has improved considerably, thereby making it feasible to fabricate high‐performance SiC power devices. 4H‐SiC epitaxial wafers of 100 and 150 mm in diameter, with low dislocation density are already available in the market and have been used to fabricate high‐performance SiC power devices [1]. However, the widespread commercialization of such devices ...