Wide Bandgap Semiconductors for Power Electronics

8Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation

Binh Duong Nguyen¹ and Stefan Sandfeld^1,2

¹Chair of Micromechanical Materials Modelling, Institute of Mechanics and Fluid Dynamics, Technische Universität Bergakademie Freiberg (TUBAF), Lampadiusstr. 4, 09599 Freiberg, Germany

²Institute for Advanced Simulation, IAS‐9: Materials Data Science and Informatics, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany

8.1 Introduction

Dislocations in semiconductors have been studied extensively for Si and GaAs, both of which have a face‐centered cubic crystal structure. Such crystal boules are grown from the melt using the Czochralski and floating zone method in the case of Si and liquid‐encapsulated ...