17Point Defects in Silicon Carbide for Quantum Technology
András Csóré1 and Adam Gali1,2
1Institute of Physics, Budapest University of Technology and Economics, Department of Atomic Physics, Institute of Physics, H‐1111 Budafoki út 8., Budapest, Hungary
2Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Konkoly‐Thege Miklós út 29‐33., H‐1121 Budapest, Hungary
17.1 Introduction
A new era in the fundamental and applied science on silicon carbide (SiC) has emerged in the field of quantum technology. This was inspired by the success of nitrogen‐vacancy (NV) center in diamond [1–5] where the coherent control of single spin could be demonstrated at room temperature by means of optical readout and initialization that ...
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