14SiC Reliability Aspects
Josef Lutz and Thomas Basler
Chemnitz University of Technology, Faculty of Electrical Engineering and Information Technology, Professorship of Power Electronics, Reichenhainer Str. 70, 09126 Chemnitz, Germany
14.1 Ruggedness and Overload Events
14.1.1 Short‐circuit Ruggedness of SiC MOSFETs
Today, only a small number of manufacturers state a short‐circuit capability in the datasheet of their respective SiC metal–oxide–semiconductor field‐effect transistors (MOSFETs). One reason is the small intrinsic short‐circuit capability compared to state‐of‐the‐art insulated gate bipolar transistors (IGBTs). The root cause can be found in the unfavorable temperature distribution during and after a short‐circuit event.
In the ...
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