Wide Bandgap Semiconductors for Power Electronics

7Dislocations in 4H‐SiC Substrates and Epilayers

Balaji Raghothamachar and Michael Dudley

Stony Brook University, Department of Materials Science & Chemical Engineering, Stony Brook, NY, 11794‐2275, USA

7.1 Introduction

Silicon carbide (SiC), chiefly the 4H polytype, is a wide bandgap semiconductor highly suited for electronic and optoelectronic devices operating under high temperature, high power, high frequency, and/or strong radiation conditions, where conventional semiconductor materials such as silicon, GaAs, and InP are considered to have reached their limits [1]. SiC‐based devices require the production of high‐quality thin films, which in turn require high‐quality substrates. Commercial SiC wafers are obtained from bulk crystals predominantly ...