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Wide Bandgap Semiconductors for Power Electronics

Name: Wide Bandgap Semiconductors for Power Electronics
ISBN: 9783527346714

by Peter Wellmann, Noboru Ohtani, Roland Rupp

January 2022

Intermediate to advanced

736 pages

24h 41m

English

Wiley-VCH

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Cover
Title Page
Title Page
Copyright
Volume 1
PrefaceIntroductionReferences
Part I: Silicon Carbide (SiC)
1 Dislocation Formation During Physical Vapor Transport Growth of 4H‐SiC Crystals
1.1 Introduction1.2 Formation of Basal Plane Dislocations During PVT Growth of 4H‐SiC Crystals1.3 Dislocation Formation During Initial Stage of PVT Growth of 4H‐SiC Crystals1.4 ConclusionsReferences
2 Industrial Perspectives of SiC Bulk Growth
2.1 Introduction2.2 SiC Substrates for GaN LEDs2.3 SiC Substrates for Power SiC Devices2.4 SiC Substrates for High‐Frequency Devices2.5 Cost Considerations for Commercial Production of SiC2.6 Raw Materials2.7 Reactor Hot Zone2.8 System Equipment2.9 Yield2.10 Turning Boules into Wafers2.11 Crystal Grind2.12 Wafer Slicing2.13 Wafer Polish2.14 SummaryAcknowledgmentsReferences
3 Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates
3.1 Introduction3.2 Fundamentals of 4H‐SiC Homoepitaxy for Power Electronic Devices3.3 Extended Defects in Homoepitaxial Layers3.4 Point Defects and Carrier Lifetime in Epilayers3.5 ConclusionAcknowledgmentsReferences
4 Industrial Perspective of SiC Epitaxy
4.1 Introduction4.2 Background4.3 The Basics of SiC Epitaxy4.4 SiC Epi Historical Origins4.5 Planetary Multi‐wafer Epitaxial Reactor Design Considerations4.6 Latest High‐Throughput Epitaxial Reactor Status4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors4.8 Increasing Wafer Diameters, Device Processing Considerations, and Projections4.9 SummaryAcknowledgmentReferences

5 Status of 3C‐SiC Growth and Device Technology
5.1 Introduction, Motivation, Short Review on 3C‐SiC5.2 Nucleation and Epitaxial Growth of 3C‐SC on Si5.3 Bulk Growth of 3C‐SiC5.4 Processing and Testing of 3C‐SiC Based Power Electronic Devices5.5 SummaryAcknowledgementsReferences
6 Intrinsic and Extrinsic Electrically Active Point Defects in SiC
6.1 Characterization of Electrically Active Defects6.2 Intrinsic Electrically Active Defects in SiC6.3 Transition Metal and Other Impurity Levels in SiC6.4 SummaryReferences
7 Dislocations in 4H‐SiC Substrates and Epilayers
7.1 Introduction7.2 Dislocations in Bulk 4H‐SiC7.3 Dislocations in Homoepitaxial 4H‐SiC7.4 SummaryAcknowledgmentsReferences
8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation
8.1 Introduction8.2 General Modeling and Simulation Approaches8.3 Continuum Dislocation Modeling Approaches8.4 Example 1: Comparison of the Alexander–Haasen and the Groma Model8.5 Example 2: Dislocation Flow Between Veins8.6 Summary and ConclusionReferences
9 Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO2 Interface
9.1 Introduction9.2 Electrical Impact of Traps on MOSFET Characteristics9.3 Microscopic Nature of Electrically Active Traps Near the Interface9.4 Conclusions and OutlookReferences
10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface
10.1 Introduction10.2 Epitaxial Graphene as a Metal10.3 Fabrication and Structuring of Epitaxial Graphene10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits10.6 Novel Experiments on Light–Matter Interaction Enabled by Epitaxial Graphene10.7 ConclusionAcknowledgmentsReferences
11 Device Processing Chain and Processing SiC in a Foundry Environment
11.1 Introduction11.2 DMOSFET Structure11.3 Process Integration of SiC MOSFETs11.4 Commercial Foundries for Si and SiC Devices11.5 Dedicated Foundries vs. Commercial FoundriesReferences
12 Unipolar Device in SiC: Diodes and MOSFETs
12.1 Introduction12.2 Unipolar Diodes – 4H‐SiC JBS Diodes12.3 Unipolar Switches: Power MOSFETs12.4 SummaryReferences
Volume 2
13 Ultra‐High‐Voltage SiC Power Device13.1 Introduction13.2 Ultra‐high‐voltage SiC PiN diode and SiC‐IGBT13.3 Reverse Characteristics of SiC Bipolar Device13.4 Carrier Lifetime Dependence on the Characteristics of Bipolar Device13.5 Design and Device Performance of Bipolar Device13.6 Current Status of SiC Bipolar DeviceReferences
14 SiC Reliability Aspects
14.1 Ruggedness and Overload Events14.2 Cosmic‐Ray Stability14.3 Thermomechanical Reliability14.4 New Power‐module Technologies with Sufficient ReliabilityAcknowledgmentsReferences
15 Industrial Systems Using SiC Power Devices
15.1 Introduction15.2 DC/DC Converters15.3 Solid‐State Transformer (SST)15.4 Wireless Charging15.5 Inductive Heating15.6 Photovoltaic15.7 DC Grids15.8 High‐Voltage DC (HVDC)15.9 Drives15.10 ConclusionsAcknowledgementsReferences
16 Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications
16.1 Background (PDPlus LLC)16.2 The Challenge of SiC Power Devices Introductions on Prototype HEVs and FCVs (TOYOTA MOTOR CORPORATION)16.3 Introduction of Boost Converter Using SiC Semiconductor for New FCV Drive (HONDA MOTOR CO., LTD.)16.4 Development of Module Technologies to Bring Out SiC Power Device Performances (TOYOTA MOTOR CORPORATION)16.5 SiC‐MOSFET Switching Characteristics and Gate Driver Circuits for Automotive Application (NISSAN MOTOR CO., LTD.)16.6 R&D of SiC Power Devices for Automotive Applications (DENSO CORPORATION)AcknowledgmentsReferences
17 Point Defects in Silicon Carbide for Quantum Technology
17.1 Introduction17.2 Silicon Carbide: Polytypes and Types of Relevant Point Defects17.3 Point Defect Single Photon Sources and Quantum Bits17.4 ConclusionAcknowledgmentsReferences
Part II: Gallium Nitride (GaN), Diamond, and Ga2O3
18 Ammonothermal and HVPE Bulk Growth of GaN
18.1 Introduction18.2 HVPE Method – History and State of the Art18.3 Ammonothermal Method – History and State of the Art18.4 HVPE‐GaN‐on‐Ammono‐GaN – State of the Art18.5 SummaryAcknowledgmentsReferences
19 GaN on Si: Epitaxy and Devices
19.1 Introduction19.2 GaN Epitaxy on Si Substrate19.3 Lateral GaN Devices on Si Substrate19.4 Application of GaN HFET19.5 Integration of Lateral GaN Devices19.6 SummaryAcknowledgmentsReferences
20 Growth of Single Crystal Diamond Wafers for Future Device Applications
20.1 Introduction20.2 High‐Pressure High‐Temperature (HPHT) Synthesis20.3 Chemical Vapor Deposition (CVD)20.4 State of the Art and OutlookAcknowledgmentsReferencesNote
21 Diamond Wafer Technology, Epitaxial Growth, and Device Processing
21.1 Diamond Epitaxial Growth and Wafers21.2 n‐Type Doping and Processing21.3 p‐Type Doping and Processing21.4 DevicesReferences
22 Gallium Oxide: Material Properties and Devices
22.1 Introduction22.2 Physical Properties of Ga2O3 22.3 Melt Bulk Growth22.4 Epitaxial Growth22.5 Vertical Diodes22.6 Lateral FETs22.7 Vertical FETs22.8 SummaryReferences
Index
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Content preview from Wide Bandgap Semiconductors for Power Electronics

7Dislocations in 4H‐SiC Substrates and Epilayers

Balaji Raghothamachar and Michael Dudley

Stony Brook University, Department of Materials Science & Chemical Engineering, Stony Brook, NY, 11794‐2275, USA

7.1 Introduction

Silicon carbide (SiC), chiefly the 4H polytype, is a wide bandgap semiconductor highly suited for electronic and optoelectronic devices operating under high temperature, high power, high frequency, and/or strong radiation conditions, where conventional semiconductor materials such as silicon, GaAs, and InP are considered to have reached their limits [1]. SiC‐based devices require the production of high‐quality thin films, which in turn require high‐quality substrates. Commercial SiC wafers are obtained from bulk crystals predominantly ...

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Wide Bandgap Semiconductors for Power Electronics

by Peter Wellmann, Noboru Ohtani, Roland Rupp

7Dislocations in 4H‐SiC Substrates and Epilayers

7.1 Introduction

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