22Gallium Oxide: Material Properties and Devices
Masataka Higashiwaki
Green ICT Device Advanced Development Center, Advanced ICT Research Institute, National Institute of Information and Communications Technology, 4‐2‐1 Nukui‐Kitamachi, Koganei, Tokyo, 184‐8795, Japan
22.1 Introduction
At present, the majority of power switching devices are made by Si. However, it is difficult to keep continuous improvements of Si device performance for a long time in the future from the viewpoint of its intrinsic material properties ruled by a small bandgap energy (Eg) of 1.1 eV. Given these circumstances, silicon carbide (SiC) and gallium nitride (GaN) are expected to be principal candidates for next‐generation power devices from their physical properties ...
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