4.1 Introduction4.2 Background4.3 The Basics of SiC Epitaxy4.4 SiC Epi Historical Origins4.5 Planetary Multi‐wafer Epitaxial Reactor Design Considerations4.6 Latest High‐Throughput Epitaxial Reactor Status4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors4.8 Increasing Wafer Diameters, Device Processing Considerations, and Projections4.9 SummaryAcknowledgmentReferences