January 2022
Intermediate to advanced
736 pages
24h 41m
English
Content preview from Wide Bandgap Semiconductors for Power Electronics
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9Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO2 Interface
Gregor Pobegen1 and Thomas Aichinger2
1KAI Kompetenzzentrum für Automobil‐ und Industrieelektronik GmbH, Europastr. 8,, 9524 Villach, Austria
2Infineon Technologies Austria AG, Villach, Austria
9.1 Introduction
At the heart of every metal oxide semiconductor field effect transistor (MOSFET) is the interface between the oxide and the semiconductor. The field effect may create a conducting channel between the source and the drain of the transistor [1] which makes up an electronic switch. Especially in the field of power transistors, designed to block source–drain voltage above 600 V, silicon ...
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