This chapter focuses on the fundamental aspects of metal-oxide semiconductor
(MOS) device behavior that are of immediate relevance to practical integrated circuit
(IC) design. It is intended as a review of basic principles rather than an in-depth
treatment of advanced topics.
Chapter Outline
This chapter is organized as follows. Section 1.2 describes the fundamental
aspects of MOS transistors. The basic properties of MOS switches are discussed
in Section 1.3. The behavior of the MOS device as a capacitor is discussed in Section
1.4.
1.2MOS Transistors
Basic Operation
Perhaps the most widely adopted proce ...
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