Semiconductors

IC DfM for Devices and Products 111

procedures are limited to straight lines terminated by 90 deg corners, it is

desired that wafer pattern also consists of such features. Rule-and model-based

and OPC both compensate for multiple process effects potentially preventing

loss of design intent. Wafer pattern, as-printed, is not “intrinsically wrong,“

and its corrections only modify problematic features causing mismatch with

design intent. Here, the impact of RB touchups to layout can be confounded by

multiple side effects. One cannot distinguish whether the sizing of a MOSFET

is required by the process bias, model inaccuracy, or extra process ...