Semiconductors

DfM Metrics 201

factor (MEEF) based on the mask edge bias of the CD contour. One way to

estimate this index is to add a small value (e.g., 2 nm) to each side of the

layout line after OPC to capture the critical steps of the imaging process and

their defect signatures.

Eliminating layout hot spots at DfM verication usually requires single-

mask changes driving MR up to the 1.5 level. In agreement with the rule

of 10, this phase has relatively lower impact on DfM metric setup, but the

highest impact on the actual product performance.

Tight control of mask count and ratio also has its drawbacks. In planar

technology, both horizontal and vertical ...