Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications

AlGaN/GaN Sensors for Direct Monitoring of Nerve Cell Response to Inhibitors 11

© 2011 by Taylor & Francis Group, LLC

1.3.4  technoloGy imPact on the surface and sensor ProPerties

The impact of typical device processing steps (KOH, HCl, HF wet chemical etching, SF

6

and Cl

plasma etching) on the surface properties of group III nitride-based chemical sensors was inves-

tigated with emphasis on wetting behavior, chemical composition, biocompatibility, and electrical

performance of the sensor [46]. KOH-free developer was used since KOH is known to attack group

III nitrides [44,80,81]. The inuence of KOH was investigated by etching the sample in