
136 Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications
© 2011 by Taylor & Francis Group, LLC
4.3.2 ion-sensitive field-effect transistor (isfet)
An open-gate Si-based eld-effect transistor (FET) with silicon oxide as a sensing material was rst
proposed as a pH sensor by Bergveld in 1970 [1]. The structure of an ISFET is similar to that of a
conventional FET but without the gate metal. During the usage, the ISFET along with a reference
electrode is immersed into the analyte solution. The analyte ions in the solution absorbed onto the
open-gate region will induce a Helmholtz voltage, similar to that of an ISE, ...