April 2016
Intermediate to advanced
324 pages
14h 53m
English
book
Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications
by Fan Ren, Stephen J Pearton
Content preview from Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications
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220 Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications
© 2011 by Taylor & Francis Group, LLC
The upper sign applies to an n-FET (p-type substrate), and the lower sign to a p-FET, with the con-
vention that positive I
DS
ows into the drain from the external circuit. C
ox
is the capacitance per unit
area of the oxide, and V′
DS
, the value of V
DS
at which the characteristics saturate, is given by
=
−
V
V V
DS
GS T
b
α
(6.2)
The parameter α
b
is given by
α
γ
φ
b
b
SB
V
= +
± ±
1
2
0
(6.3)
where the body coefcient γ
b
is given by in terms of the doping density N
B
by
γ
ε
b
s B
ox
q N
C
=
2
(6.4)
In Equation 6.3, the parameter ϕ
0
is the value
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