
ZnO Thin-Film and Nanowire-Based Sensor Applications 179
© 2011 by Taylor & Francis Group, LLC
The rst structure is shown in Figure5.21 and was suggested by Sato and Katayama-Yoshida
(Mat. Res. Soc. Symp. Proc. Vol. 666, F4.6.1, 2001) as an analogue of the spin-FET. The struc-
ture takes advantage of the fact that (Zn,Mn)O can be grown as an antiferromagnetic spin-glass
insulator, while hole- and Mn-co-doped ZnO can be a half-metallic ferromagnet. In the structure
of Figure5.21, the application of negative gate bias brings holes into the (Zn,Mn)O and converts
it to the half-metallic ferromagnetic state. Using ferromagnetic (Zn,Co)O as the ...