
ZnO Thin-Film and Nanowire-Based Sensor Applications 189
© 2011 by Taylor & Francis Group, LLC
UV illumination produces an ohmic characteristic. This is similar to the result reported by Keem
et al., who showed that the above-bandgap light lowered the potential barrier between the Schottky
contact and the ZnO nanowire. In their case, however, the photoresponse recovery times were very
long (>10
4
s), which was ascribed to the dominance of surface states, whereas our recovery times
were limited by turn-off of the Hg lamp and suggest the conduction in our nanowires is dominated
by bulk transport.
Figure5.34 shows the reverse current characterist ...