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#### Solved Problems

1.    Find the resistivity of an intrinsic semiconductor with intrinsic concentration of 2.5 × 1019 per m3. The mobilities of electrons and holes are 0.40 m2/ V-s and 0.20 m2/ V-s.

Sol: Given data are:

Intrinsic concentration (ni) = 2.5 × 1019/m3

Mobility of electrons (μn) = 0.40 m2/V-s

The mobility of holes (μp) = 0.20 m2/V-s

The conductivity of an intrinsic semiconductor (σi) = nie[μn + μp]

2.    Calculate the number of donor atoms per m3 of n-type material having resistivity of 0.25 Ω-m, the mobility of electrons is 0.3 m2/V-s.

Sol: We know:

[Since n = number of free electron per m3 ≈ number of donor atoms in n-type]

3.    At ...

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