handling capabilities. Table 12.1 [7] presents a comparison of MEMS switches with
PIN diodes and eld-effect transistors (FETs).
Although they are small in size and exhibit low parasitic losses, the mono-
lithic conguration connes the device to a substrate common to the entire system.
Furthermore, the power handling [8] capabilities of RF-MEMS devices have been
limited due to the use of all metal structures in the devices. Diamond has long been
used in active devices such as FETs for high power electronics [9]. Also its stability
under high temperature (1000°C) makes it a very good candidate for ...
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