298CHAPTER 12 Nanocrystalline diamond for RF-MEMS applications
hand, excess concentration of boron promotes graphitization due to the incorporation
of boron interstitial sites. In case of single crystal or microcrystalline diamond, p-type
conductivity can be easily achieved. But, it is difcult to obtain n-type conductivity
at room temperature in these lms as nitrogen forms a deep donor (1.7 eV). On
the other hand, nitrogen forms a shallow donor level (0.4 eV) [25] in NCD/UNCD
lms and results in high n-type conductivity (143/ /cm).
12.4 GROWTH MECHANISM OF NCD FILMS
Thin-lm NCD lms are grown through a CVD process wherein the growth ...
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