deposited at required positions, or the FIB can be used to mill through the substrate
to the catalyst layers beneath. Wu etal. reported the fabrication of gatelike structures
by sputtering using FIB. Metal-gated CNT eld emitter arrays were fabricated using
a multilayer structure with an embedded catalyst layer instead of depositing the cata-
lyst into milled holes, as is common practice [300]. A 15 nm ITO diffusion barrier
was deposited onto a Si substrate followed by 10 nm Ni, which served as the CNT
catalyst. A 1 µm thick insulating SiO
2
layer was deposited onto the Ni catalyst ...
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