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Crystal Growth and Evaluation of Silicon for VLSI and ULSI
book

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

by Golla Eranna
December 2014
Intermediate to advanced
430 pages
18h 9m
English
CRC Press
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
16 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
TABLE 1.6
300 mm Diameter Silicon Wafer Specications for CMOS VLSI Circuits
Crystal/Bulk
Diameter 300 ± 0.5 mm
Orientation 100
Orientation tolerance Degree ±0.2
Off orientation Degree 0
Dopant Boron/phosphorus
Resistivity target range Prime - boron Ohm-cm 0.5–50
Prime - phosphorus Ohm-cm 1.0–50
Radial resistivity
variation
Boron typical % <10
Phosphorus typical % <15
Oxygen target range
(±Tol)
Prime - boron at cm
-3
4.8–7.8 × 10
17
(±0.5)
Prime - phosphorus ASTM F121-83 4.8–7.8 × 10
17
(±0.5)
Minority carrier lifetime μs >200
Radial oxygen variation Typical % <10
Bulk metal concentration Fe at cm
-3 ...
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Publisher Resources

ISBN: 9781482232813