
16 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
TABLE 1.6
300 mm Diameter Silicon Wafer Specications for CMOS VLSI Circuits
Crystal/Bulk
Diameter 300 ± 0.5 mm
Orientation 100
Orientation tolerance Degree ±0.2
Off orientation Degree 0
Dopant Boron/phosphorus
Resistivity target range Prime - boron Ohm-cm 0.5–50
Prime - phosphorus Ohm-cm 1.0–50
Radial resistivity
variation
Boron typical % <10
Phosphorus typical % <15
Oxygen target range
(±Tol)
Prime - boron at cm
-3
4.8–7.8 × 10
17
(±0.5)
Prime - phosphorus ASTM F121-83 4.8–7.8 × 10
17
(±0.5)
Minority carrier lifetime μs >200
Radial oxygen variation Typical % <10
Bulk metal concentration Fe at cm
-3 ...