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Crystal Growth and Evaluation of Silicon for VLSI and ULSI
book

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

by Golla Eranna
December 2014
Intermediate to advanced
430 pages
18h 9m
English
CRC Press
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
139Different Techniques for Growing Single-Crystal Silicon
With the oat-zone (FZ) process, crucible contamination is eliminated and the crystal
is grown vertically with the help of a seed and an RF induction heating element to melt
the silicon locally. The crystal is allowed to grow by holding the molten silicon, and a
polysilicon rod feeds the growing silicon in this process. This method eliminates the
crucible contamination and provides better crystals than does the CZ method. Large
crystals are difcult to grow with this method, and there are limitations with the induc-
tion coil shape.
Zone rening is used to get better crystals similar to ...
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Publisher Resources

ISBN: 9781482232813