
139Different Techniques for Growing Single-Crystal Silicon
With the oat-zone (FZ) process, crucible contamination is eliminated and the crystal
is grown vertically with the help of a seed and an RF induction heating element to melt
the silicon locally. The crystal is allowed to grow by holding the molten silicon, and a
polysilicon rod feeds the growing silicon in this process. This method eliminates the
crucible contamination and provides better crystals than does the CZ method. Large
crystals are difcult to grow with this method, and there are limitations with the induc-
tion coil shape.
Zone rening is used to get better crystals similar to ...