Crystal Growth and Evaluation of Silicon for VLSI and ULSI

333Defects in Silicon Wafers

nonuniform contacts on the susceptor during chemical vapor deposition (CVD) operations,

and can exhibit a substantial temperature variation with the slice curvature effects. This

temperature difference may readily activate residual surface dislocation sources.

The heating and cooling of silicon wafers introduce many process-induced slips where a

visible defect spreads, leading to wafer breakage and subsequent rejection from the batch of

wafers. Presence of the slip and its associated edge dislocations degrade electrical param-

eters, especially if precipitation of metals or dopant atoms accumulate in those sites. Thus,

minimizing these large defects in wafers is highly desirable [179]. Yoriume [180] conducted

exper ...