
328 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
shows the crystal temperature distributions simulated by using FEMAG, an axisymmetrical
numerical simulation code, in a fast-cooling hot zone, a slow-cooling hot zone, and a very
slow-cooling hot zone. The heater power was automatically adjusted to make the tempera-
ture at the triple junction the melting point of silicon. It was concluded that the cooling rate
from 1412°C, the melting point of silicon, to 1150°C does not seem to be as important for the
generation or annihilation of the defects listed earlier. Although the defect densities and the
positions where the defect densities ...