December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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84 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
and many teams are working to interpret the partial pressure, evaporation of SiO, and its
distribution [108–110]. It is difcult to play with this unintentional impurity when grow-
ing single-crystal silicon.
The presence of nitrogen in growing crystals has a lot of influence on the forma-
tion of vacancies, self-interstitials, and microdefects in CZ crystals. Defect forma-
tion mechanisms in the presence of nitrogen are a major research topic at present.
Nitrogen monomers and dimmers, nitrogen and vacancies, and formation of clusters
are studied by Kulkarni [111] in growing CZ crysta ...
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