December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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338 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
4. H. Furuya, K. Harada, and J.-G. Park, “Defect reduction and improved gettering in CZ single
crystal silicon,” Solid State Technology, 44, 109, 2001, and the references therein.
5. R. Falster and V. V. Voronkov, “Intrinsic point defects and their control in silicon crystal growth
and wafer processing,” MRS Bulletin, 28–32, June 2000, and the references therein.
6. K. Takano, M. Iida, E. Iino, M. Kimura, and H. Yamagishi, “Relationship between grown-in defects
and thermal history during CZ Si crystal growth,” Journal of Crystal Growth, 180, 363–371, 1997.
7. J. E. Lawrence, “Behavior of dislocations in silicon semiconductor devices: Diffusion, electri-
cal,” Journal of the ...
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