December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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220 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
118. D. E. Hill, “Determination of interstitial oxygen concentration in low-resistivity n-type sili-
con wafers by infrared absorption measurements,” Journal of the Electrochemical Society, 137,
3926–3928, 1990.
119. B. G. Rennex, J. R. Ehrstein, and R. I. Scace, “Methodology for the certication of reference
specimens for determination of oxygen concentration in semiconductor silicon by infrared
spectrophotometry,” Journal of the Electrochemical Society, 143, 258–263, 1996.
120. B. G. Rennex, J. R. Ehrstein, and R. I. Scace, “Methodology for the certication of reference
specimens for determination of oxygen concentration in semiconductor silicon by infrared
spectrophotometry ...
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