December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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308 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
grown crystals. The void strongly affects the GOI, which actually relates to the cooling rate
of the crystal and the concentration of nitrogen present in the lattice sites. This model could
simulate not only the behavior of void defects in ordinary crystal growth, but detaching
or halting crystal growth methods as well. Both the size distribution of the voids and the
thickness of the inner oxide lm agreed with the experimental results with high accu-
racy. Figure 9.8 shows the experimental and calculated results of void size distribution in
300mm diameter crystal. The oxygen concen ...
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