
282 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
solubility in silicon is ~5.0 × 10
19
cm
−3
at 1000°C [187]. Consequently, tin acts as a selec-
tive vacancy trap, while, in contrast, not affecting interstitial reactions. This leads to a
reduced formation of oxygen thermal donors in n-type silicon and lowers the concentra-
tion of vacancy-oxygen and divacancy centers in irradiated material. Tin-doped silicon
is, in many respects, an interesting tool for studying the impact of native point defects on
impurity diffusion and defect formation processes. However, the occurrence of specic
deep-level centers could prohibit its practical usef ...