December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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272 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
observed in various TEM investigations. A more advanced model treats the incorporation of
vacancies and oxygen into incoherent precipitates independently. Another more advanced
model of incoherent nucleation also incorporates the segregation of interstitials to the pre-
cipitate nuclei. It is assumed that part of the generated self-interstitials is incorporated into
the growing oxide precipitate instead of being emitted into the host matrix. Nucleation of
oxide precipitates in the silicon lattice usually takes place below 1000°C. This is a typical
temperature range where the majority ...
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