December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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252 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
provided details on the size and shape of the particles. The latter are in the form of thin
platelets and match the structure of the silicon lattice. These results clearly contradict the
models developed to account for the difference between carrier and arsenic concentration,
which hypothesize the formation of a high-equilibrium concentration of complex point
defects, making the excess dopant electrically inactive.
Oxygen precipitation behavior in heavily arsenic-doped CZ silicon wafers, with and
without prior rapid thermal processing (RTP) at 1100°C to 1250°C, and subjected to sub-
sequent two-step annealing at various lower temperatures, was reported by Wang et al.
[18]. They proposed ...
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