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Crystal Growth and Evaluation of Silicon for VLSI and ULSI
book

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

by Golla Eranna
December 2014
Intermediate to advanced
430 pages
18h 9m
English
CRC Press
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
50 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
a vacancy, or missing atom. This vacancy is occupied in a perfect crystal. The stability of
the surrounding crystal structure assures that the adjacent atom will not simply collapse
around the vacancy. As shown in the gure, the presence of a vacancy distorts the lat-
tice network. The vacancy here is active because of the missing coordination bond of the
neighboring lattice atoms. This vacancy may attract other free ions present in the intersti-
tial positions to ll that vacant portion of the lattice. Agglomeration of such defects may
increase the defect size, as shown in Figure 3.2 ...
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Publisher Resources

ISBN: 9781482232813