
89Different Techniques for Growing Single-Crystal Silicon
crystal then becomes low and uniform. The part exerting the greatest effect on oxygen
concentration of the whole bulk melt is the crucible corner, which is the hottest point
during the crystal growth process. Dissolution from the crucible corner remains high in
the oxygen concentration in the whole bulk melt, and oxygen concentration below the
growth interface region reaches an equilibrium with the free surface area, resulting in
crystals with a high oxygen content. Togawa et al. [121] conrmed that the upward ow
from the crucible bottom transports oxygen to the growth interface, and ...