
180 Crystal Growth and Evaluation of Silicon for VLSI and ULSI
dN(E)/dE (Arbitrary units)
Electron energy, eV
Carbon
Argon
Nitrogen
Oxygen
X1
No cleanup
Fluorine
X10
O
2
plasma
X1
Ar
+
sputtered
X1 Liquid reagent (B)
X 85
X10
Chlorine
X1
X10
100 200 300 400 500 600 700 800 900
Silicon
FIGURE 6.2
Typical Auger spectra after various surface cleaning procedures. (From M. G. Yang, K. M. Koliwad, and G. E.
McGuire, Journal of the Electrochemical Society, 122, 675–678, 1975, and the references therein [47].)
Kinetic energy (eV)
(Sputtered)
100 400200 300 500 600 700 800 900
1000
1200
1400
1600
1800
2000
Si
Ar
Ti
Ti
V
V
O
Fe
Fe
Fe
Ni
Ni
Si
Al
FIGURE 6.3
AES spectra of metallurg ...