December 2014
Intermediate to advanced
430 pages
18h 9m
English
Content preview from Crystal Growth and Evaluation of Silicon for VLSI and ULSI
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343Defects in Silicon Wafers
114. G. A. Rozgonyi and R. A. Kushner, “The elimination of stacking faults by preoxidation getter-
ing of silicon wafers: III. Defect etch pit correlation with p-n junction leakage,” Journal of the
Electrochemical Society, 123, 570–576, 1976.
115. T. Hattori, “Elimination of stacking faults in silicon by trichloroethylene oxidation,” Journal of
the Electrochemical Society, 123, 945–946, 1976, and the references therein.
116. H. Hashimoto, H. Shibayama, H. Masaki, and H. Ishikawa, “Annihilation of stacking faults in
silicon by impurity diffusion,” Journal of the Electrochemical Society, 123, 1899–1902, 1976.
117. H.-D. Chiou, “The effects of preheatings on axial oxygen precipitation uniformity in Czochralski ...
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