Crystal Growth and Evaluation of Silicon for VLSI and ULSI

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4

Different Techniques for Growing

Single-Crystal Silicon

4.1 Introduction

The silicon industry depends heavily on a ready supply of good-quality silicon wafers for

processing integrated circuits. Typical specications depend on various physical param-

eters, such as wafer diameter, thickness, degree of atness, mechanical defects, crystal-

lographic orientation, crystal defect and dislocation density, and polishing. Electrical

parameters include dopant type, dopant impurity, resistivity range, and the level of unin-

tentional impurities, in particular, oxygen, carbon, and iron. Other parameters will depend

upon the specic application.

Today, very ...