October 2006
Intermediate to advanced
544 pages
20h 23m
English
Content preview from Digital Systems: Principles and Design
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131Logic Gates
For turning the MOSFET in ON state, an enhancement mode p-channel needs V
GS
<
V
GS
T
.
Depletion mode p-channel needs V
GS
< +
V
GS
T
. (Figure 6.3(c) and (d))
Enhancement mode MOSFET as a Resistance: If we join the drain and gate, V
GS
=
V
DS
. When I
D
= 0, V
DS
= V
T
GS
. The resistance is non-linear. Very high at V
DS
= V
T
GS
and
drops sharply with V
DS
change. (Figure 6.3(e))
Depletion mode MOSFET as a Resistance: If we join the drain and gate, V
GS
= V
DS
.
When I
D
= 0, V
DS
= V
T
GS
. The resistance is non-linear. Very high at V
DS
= V
T
GS
and drops
sharply with V
DS
change. At V
GS
= 0 also it is not very high.
6.3.2.2 MOSFET Circuit Features
Static
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