Characterization in Silicon Processing

Materials,

Inc., Santa Clara, CA), in which wafers rest vertically in pockets on a

prism-shaped susceptor in a cylindrical chamber. Lamp heating is used, and the

susceptor rotates during deposition. Reactant gases are introduced at the top of the

chamber and exhausted at the

bottom.

A second type is the "vertical" or "pancake"

reactor (Lam Research, Inc.,

Fremont,

CA), in which wafers rest on a radio frequen-

cy

(RF) induction-heated horizontal annular susceptor. Reactant gases are injected

vertically

through the center of the susceptor and pass over the wafers during re-

circulation

through the chamber prior to exhausting at the

bottom

of th ...