October 2013
Intermediate to advanced
240 pages
11h 53m
English
Content preview from Characterization in Silicon Processing
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Figure
4.7 IR photograph of a wafer on a substrate holder with heat
applied.
Colors (seen here as shades of gray) indicate
tem-
perature.
Temperature
range is 20-180 °C.
(from either the preclean or the previous process step) can act as preferential nu-
cleation
sites. The surface energy of the sputtered species
will
affect the growth
process due to the increase/decrease in surface mobility of the sputtered species. An
increase
in the cathode to substrate bias
will
cause higher surface mobility due to
the increase in the sputtered species energy. Surface mobility is also
largely
depen-
dant
upon
the interaction of the sputtered species with th ...
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