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Characterization in Silicon Processing
book

Characterization in Silicon Processing

by Yale Strausser
October 2013
Intermediate to advanced
240 pages
11h 53m
English
Newnes
Content preview from Characterization in Silicon Processing
Figure
6.4
XTEM images
of (a)
as-deposited
and ib) 460
°C, 40-min
an-
nealed Tl/AI-Si metal structures
on
oxide substrate.
The
rough Tl/AI-Si interface
in the
annealed sample is from AI
3
Tî
intermetallic compound formation.
destructive, and their data is more complex and difficult to interpret. However, they
can be used in a spatially resolved manner to check for lateral inhomogeneity.
The interaction between the barrier and the aluminum can be examined micro-
structurally using XTEM. XTEM images of as-deposited and 430 °C, 70-min
annealed
Si02/Ti/Al-2%
Si samples are shown in Figure 6.4. The Ti/Al-2% Si
interface is well-defined and sharp in
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Publisher Resources

ISBN: 9780080523422