aluminum penetration and are supported by RBS, sheet resistance,
Auger
analyses.
0.63
I
Λ I ] J 1_
RT
350 400 450 500
Annealing Temperature
(°C)
Figure 3.29 Schottky barrier height and ideality factor versus annealing
temperature for AI/CoSi
2
/n-Si devices.
3.3 THE SILICIDE-SILICON INTERFACE
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