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Characterization in Silicon Processing
book

Characterization in Silicon Processing

by Yale Strausser
October 2013
Intermediate to advanced
240 pages
11h 53m
English
Newnes
Content preview from Characterization in Silicon Processing
3.3
The
Silicide-Silicon
Interface
The nature of the silicide-silicon interface, which contributes significantly to the
Schottky barrier diode characteristics, contact resistance, and leakages in the active
device
under the suicide contact, is difficult to ascertain using resistance, XRD, and
even the RBS measurements. A pictorial view of the interface can be obtained by
the cross-sectional transmission electron microscopy (XTEM).
46
Epitaxial relation-
ships can be examined by the use of channeling
RBS.
35
The X-ray photoelectron
spectroscopy (XPS),
47
Raman microprobe
analysis,
48
ballistic electron emission mi-
croscopy (BEEM),
49
low -energy electro ...
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Publisher Resources

ISBN: 9780080523422