Characterization in Silicon Processing

over titanium

silicide.

However,

other

concerns, including local effects near certain

types

of

contacts, prevent this technology from being used. Current practice

is to

use

the

S1H4

reduction reaction

for

WF

6

when depositing selective tungsten.

Table

5.1

summarizes

the

film/deposition parameters

that

are

critical

for

using

both

blanket

and

selective

CVD

tungsten

and the

analytical techniques used

to

characterize them.

References

1

R.

Blumenthal

and G. C.

Smith.

Tungsten

and

Other

Refractory

Metah

for

VLSI

Applications

ΠΙ

(V.

Wells,

Ed.) Mat. Res. Soc, Pittsburgh, 1988,

p. 47.

2

W. T.

Runyan. Semiconductor Measurements

and

Instrumentation.