
Deep Level Transient Spectroscopy (DLTS)
4
Ν. M.
JOHNSON
Deep
level transient spectroscopy (DLTS) is an experimental technique for charac-
terizing
the electronic properties of deep level defects in semiconductors. It is the
most
sensitive spectroscopy yet devised for the detection and characterization of
such defects. The measurement is performed on semiconductor devices
that
possess
a
voltage-modulable space charge
layer.
The
most
commonly used devices are
Schottky-barrier
diodes, p-n junction diodes, and metal-insulator semiconductor
(MIS)
or metal-oxide semiconductor (MOS) capacitors. For a given deep level
defect, the DLTS measurement can ...